Lateral Crystallization Velocity in Explosive Crystallization of Amorphous Silicon Films Induced by Flash Lamp Annealing

被引：24

作者：

Ohdaira, Keisuke ^{[1
,2
]}

Tomura, Naohito ^{[1
]}

Ishii, Shohei ^{[1
]}

Matsumura, Hideki ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol JAIST, Nomi, Ishikawa 9231292, Japan

[2] Japan Sci & Technol Agcy JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 09期

关键词：

amorphous semiconductors; crystallisation; CVD coatings; elemental semiconductors; incoherent light annealing; semiconductor thin films; silicon; sputtered coatings; SOLID-PHASE CRYSTALLIZATION; SI FILMS; PHENOMENOLOGICAL THEORY; GLASS; JET;

D O I：

10.1149/1.3602192

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We propose a new method to estimate the explosive crystallization (EC) velocity (v(EC)) of amorphous silicon (a-Si) films using multi-pulse flash lamp annealing (FLA). This system produces discrete pulses at frequencies of 1-10 kHz to form a quasi-millisecond pulse. The multi-pulses leave behind macroscopic stripe patterns on the surfaces of polycrystalline Si (poly-Si) films, the widths of which are indications of v(EC). We find that catalytic chemical-vapor-deposited (Cat-CVD) and sputtered a-Si films show v(EC) of similar to 4 m/s, whereas the use of electron-beam-evaporated a-Si results in much higher v(EC) of similar to 14 m/s, indicating the emergence of different EC mechanisms. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3602192] All rights reserved.

引用

页码：H372 / H374

页数：3

共 22 条

[1] EXPLOSIVE CRYSTALLIZATION OF A-SI FILMS IN BOTH THE SOLID AND LIQUID-PHASES [J].

AUVERT, G ;

BENSAHEL, D ;

PERIO, A ;

NGUYEN, VT ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :724-726

[2] IMPURITY SEGREGATION DURING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON [J].

BENSAHEL, D ;

AUVERT, G ;

PERIO, A ;

PFISTER, JC ;

IZRAEL, A ;

HENOC, P .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3485-3488

[3]

Buchner C., 2010, Proc. Appl. Math. Mech, V10, P493

[4] Stress-induced nucleation of microcrystalline silicon from amorphous phase [J].

Fujiwara, H ;

Kondo, M ;

Matsuda, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A) :2821-2828

[5] EXPLOSIVE CRYSTALLIZATION IN SILICON [J].

GEILER, HD ;

GLASER, E ;

GOTZ, G ;

WAGNER, M .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3091-3099

[6] Explosive crystallization in the presence of melting [J].

Grigoropoulos, C ;

Rogers, M ;

Ko, SH ;

Golovin, AA ;

Matkowsky, BJ .

PHYSICAL REVIEW B, 2006, 73 (18)

[7] Heat transport analysis for flash lamp annealing [J].

Habuka, Hiroshi ;

Hara, Akiko ;

Karasawa, Takeshi ;

Yoshioka, Masaki .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (3A) :937-942

[8] Mobility enhancement limit of excimer-laser-crystallized polycrystalline silicon thin film transistors [J].

Hara, A ;

Takeuchi, F ;

Sasaki, N .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) :708-714

[9] PHENOMENOLOGICAL THEORY OF EXPLOSIVE SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON .2. DYNAMIC PROCESSES [J].

HEINIG, KH ;

GEILER, HD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (01) :99-104

[10] PHENOMENOLOGICAL THEORY OF EXPLOSIVE SOLID-PHASE CRYSTALLIZATION OF EXPLOSIVE SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS-SILICON .1. STATIONARY SOLUTIONS [J].

HEINIG, KH ;

GEILER, HD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 92 (02) :421-430

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