CMOS Compatible Al-Doped ZnO Sol-Gel Thin-Film Properties

被引：1
作者：
Ben Moussa, Nizar [1 ,2 ]
Lajnef, Mohamed [2 ]
Jebari, Nessrine [1 ]
Mahut, Frederic [1 ]
Villebasse, Cedric [1 ]
Lafosse, Xavier [1 ]
David, Christophe [1 ]
Chaste, Julien [1 ]
Chtourou, Radhouane [2 ]
Herth, Etienne [1 ]
机构：
[1] Univ Paris Saclay, Univ Paris Sud, Ctr Nanosci & Nanotechnol, CNRS,UMR 9001, F-91120 Palaiseau, France
[2] Univ Tunis El Manar, Fac Sci Tunis, Res & Technol Ctr Energy, Lab Nanomat & Syst Renewable Energies LaNSER, Technopk Borj Cedria,BP 095, Hammam Lif, Tunisia
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 07期
关键词：
CMOS compatible; sol-gel; structural properties; TCOs; zinc oxide; OPTICAL-PROPERTIES; OXIDE-FILMS; GROWTH; AZO; NANOPARTICLES; FABRICATION; LAYERS; DOPANT; TCO; ITO;
D O I：
10.1002/pssa.202100480
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc oxide (ZnO) is a low-cost class of n-type inorganic semiconductors with a large exciton binding energy (approximate to 60 meV), wide direct bandgap (3.37 eV), and the most important material for various fields of industrial and deep-tech applications. Herein, a complementary metal-oxide-semiconductor (CMOS) temperature compatible (400 degrees C)- integrated circuit (IC) process based on the sol-gel method is described. The properties of aluminum (Al)-doped ZnO (AZO) thin films were investigated. The Al content, Al/(Al+Zn) ratio, varies from 0 to 10% and exhibits compressive stresses from -4 to -1.8 GPa. At low dopant concentrations, the Al content acts as an electrical dopant, while at higher dopant concentrations, it acts as an impurity. The electrical resistivity, which was only 3 x 10(-3) omega cm, is inversely related to the orientation of the thin film, which was preferably along the (0 0 2) direction. The optical bandgap energy of AZO thin films was determined to be in the range of 3.34-3.87 eV. Herein, a novel method to change the Al content of doped AZO thin films to improve their properties is described, which is suitable for next-generation flexible, microsystem, and optoelectronic devices.
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页数：10
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