The effect of a space charge on the operation of a high-power semiconductor current interrupter

被引:13
作者
Rukin, SN [1 ]
Tsyranov, SN [1 ]
机构
[1] Russian Acad Sci, Ural Div, Inst Electrophys, Ekaterinburg, Russia
关键词
D O I
10.1134/1.1646704
中图分类号
O59 [应用物理学];
学科分类号
摘要
A theoretical model has been developed that describes operation of a high-power semiconductor current interrupter (SOS diode) with allowance for the space charge formation. According to this model, as well as to the models based on the quasineutral approximation, the process of current breakage in a semiconductor structure of the SOS diode is related to the formation of strong field regions in highly doped parts of the structure. The space charge decreases the role of avalanche multiplication, thus providing for higher switching characteristics of the diode. (C) 2004 MAIK "Nauka / Interperiodica".
引用
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页码:19 / 22
页数:4
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