Inversion mode n-channel GaAs field effect transistor with high-k/metal gate

被引:70
作者
De Souza, J. P. [1 ]
Kiewra, E. [1 ]
Sun, Y. [1 ]
Callegari, A. [1 ]
Sadana, D. K. [1 ]
Shahidi, G. [1 ]
Webb, D. J. [2 ]
Fompeyrine, J. [2 ]
Germann, R. [2 ]
Rossel, C. [2 ]
Marchiori, C. [2 ]
机构
[1] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Corp, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
关键词
D O I
10.1063/1.2912027
中图分类号
O59 [应用物理学];
学科分类号
摘要
Highly effective passivation of GaAs surface is achieved by a thin amorphous Si (a-Si) cap, deposited by plasma enhanced chemical vapor deposition method. Capacitance voltage measurements show that carrier accumulation or inversion layer is readily formed in response to an applied electrical field when GaAs is passivated with a-Si. High performance inversion mode n-channel GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with an a-Si/high-k/metal gate stack. Drain current in saturation region of 220 mA/mm with a mobility of 885 cm(2)/V s were obtained at a gate overdrive voltage of 3.25 V in MOSFETs with 5 mu m gate length. (C) 2008 American Institute of Physics.
引用
收藏
页数:2
相关论文
共 12 条
  • [1] PROPERTIES OF SIO2/SI/GAAS STRUCTURES FORMED BY SOLID-PHASE EPITAXY OF AMORPHOUS SI ON GAAS
    CALLEGARI, A
    SADANA, DK
    BUCHANAN, DA
    PACCAGNELLA, A
    MARSHALL, ED
    TISCHLER, MA
    NORCOTT, M
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (22) : 2540 - 2542
  • [2] Metal-insulator-semiconductor structures on p-type GaAs with low interface state density
    Chen, Z
    Park, DG
    Stengal, F
    Mohammad, SN
    Morkoc, H
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (02) : 230 - 232
  • [3] Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si/SiO2 interlayers
    Koester, S. J.
    Kiewra, E. W.
    Sun, Yanning
    Neumayer, D. A.
    Ott, J. A.
    Copel, M.
    Sadana, D. K.
    Webb, D. J.
    Fompeyrine, J.
    Locquet, J. -P.
    Marchiori, C.
    Sousa, M.
    Germann, R.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (04)
  • [4] Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer -: art. no. 022106
    Koveshnikov, S
    Tsai, W
    Ok, I
    Lee, JC
    Torkanov, V
    Yakimov, M
    Oktyabrsky, S
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (02) : 1 - 3
  • [5] The (Ga2O3)1-x(Gd2O3)x oxides with x=0-1.0 for GaAs passivation
    Kwo, J
    Hong, M
    Kortan, AR
    Murphy, DW
    Mannaerts, JP
    Sergent, AM
    Wang, YC
    Hsieh, KC
    [J]. COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 57 - 67
  • [6] Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
    Passlack, M
    Hong, M
    Mannaerts, JP
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (08) : 1099 - 1101
  • [7] 1-μm enhancement mode GaAsN-channel MOSFETs with transconductance exceeding 250 mS/mm
    Rajagopalan, K.
    Droopad, R.
    Abrokwah, J.
    Zurcher, P.
    Fejes, P.
    Passlack, M.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (02) : 100 - 102
  • [8] Demonstration of enhancement-mode p- and m-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide
    Ren, F
    Hong, M
    Hobson, WS
    Kuo, JM
    Lothian, JR
    Mannaerts, JP
    Kwo, J
    Chu, SNG
    Chen, YK
    Cho, AY
    [J]. SOLID-STATE ELECTRONICS, 1997, 41 (11) : 1751 - 1753
  • [9] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION
    SANDROFF, CJ
    NOTTENBURG, RN
    BISCHOFF, JC
    BHAT, R
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 33 - 35
  • [10] Taur Y., 1998, FUNDAMENTALS MODERN