Charge transport-accumulation in multilayer structures with Si3N4 and thick(5.5 nm) SiO2

被引：9

作者：

Novikov, Yu. N. ^{[1
]}

机构：

[1] Inst Semicond Phys SB RAS, Novosibirsk 630090, Russia

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 15期

基金：

俄罗斯科学基金会;

关键词：

OXIDE-SEMICONDUCTOR STRUCTURES; NITRIDE THIN-FILMS; SILICON-NITRIDE; INTERFACE; ELECTRON; MEMORY; IONIZATION; CONDUCTION; DEVICES; TRAPS;

D O I：

10.1063/1.4918312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double-injection, transport, and accumulation of charge in metal-thick oxide-nitride-silicon and silicon-tunnel oxide-nitride-thick oxide-silicon structures have been theoretically studied. Calculation results were compared to experimental results. The charge transport in Si3N4 is quantitatively described assuming the multiphonon ionization theory of neutral traps with a capture cross-section less than 10(-14) cm(2). With traps amphoterism taken into account, the calculation predicts the existence of a layer with their excessive concentration near the SiO2/Si3N4 interface. The model satisfactorily describes the write/erase characteristics in silicon-oxide-nitride-oxide-silicon-structures from Bu and White (Solid-State Electron. 45, 113 (2001)). (C) 2015 AIP Publishing LLC.

引用

页数：6

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