Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering

被引：59

作者：

Kim, KK

Tampo, H

Song, JO

Seong, TY

Park, SJ

Lee, JM

Kim, SW

Fujita, S

Niki, S

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Thin Film Compound Semicond Team, Tsukuba, Ibaraki 3058586, Japan

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] Sunchon Natl Univ, Dept Mat Sci & Met Engn, Sunchon 504742, Chonnam, South Korea

[4] Kyoto Univ, Int Innovat Ctr, Kyoto 6068501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 7A期

关键词：

rapid thermal annealing; dopant activation; photoluminescence; Hall measurements; n-type ZnO;

D O I：

10.1143/JJAP.44.4776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality Al-doped n-type ZnO (n-ZnO:Al) epilayers have been grown by an rf-magnetron sputtering technique combined with a rapid thermal annealing (RTA) process. The electrical and optical properties of as-deposited samples are considerably improved upon annealing at 900 degrees C for 3 min in nitrogen ambient. The improvement is attributed to the deoxidation of Al-oxides, i.e., the activation of Al dopants. The samples annealed at 900 degrees C produce a mobility of 65.5 cm(2)/V.s and a carrier concentration of 1.03 x 10(20) cm(-3). It is also shown that the sample surface becomes significantly smoother after annealing.. The results show that the RTA process effectively improves the electrical and optical properties of the Al-doped ZnO films.

引用

页码：4776 / 4779

页数：4

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