Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er2O3:ZnO and Ge Co-Sputtered Films

被引：2
作者：
Fan, Ranran [1 ]
Lu, Fei [1 ]
Li, Kaikai [1 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China
来源：
NANOMATERIALS | 2017年 / 7卷 / 10期
基金：
中国国家自然科学基金;
关键词：
photoluminescence; nanomaterials; rare-earth-doped materials; optical properties of thin films; deposition and fabrication; VISIBLE PHOTOLUMINESCENCE; INFRARED PHOTOLUMINESCENCE; THIN-FILMS; LUMINESCENCE; SIO2; ZNO; SILICA; EXCITONS; MATRICES; OXIDE;
D O I：
10.3390/nano7100311
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Photoluminescence (PL) of Er and Ge co-doped ZnO films synthesized by radio frequency magnetron co-sputtering was investigated. X-ray diffraction (XRD) patterns showed that the annealing process at 400-800 degrees C led to the formation of nanocrystal (nc) Ge. Samples containing nc-Ge showed a strong visible PL with a peak at 582-593 nm, which was consistent with the calculated energy of the exciton of the similar to 5 nm-sized nc-Ge, according to the quantum confinement effect. The formation of nc-Ge could greatly enhance the 1.54 m emission, and it is considered that the 1.54 m PL enhancement may come from a joint effect of both the energy transfer from nc-Ge to Er3+ and the local environment change of Er3+.
引用
收藏
页数：8
相关论文
共 36 条
  • [1] Synthesis and size differentiation of Ge nanocrystals in amorphous SiO2
    Agan, S
    Çelik-Aktas, A
    Zuo, JM
    Dana, A
    Aydinli, A
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 83 (01): : 107 - 110
  • [2] Ahn H., 2017, IEEE J SEL TOP QUANT, V23, DOI 10.1109/JSTQE.2017. 2651100
  • [3] Violet luminescence in Ge nanocrystals/Ge oxide structures formed by dry oxidation of polycrystalline SiGe
    Avella, M
    Prieto, AC
    Jiménez, J
    Rodríguez, A
    Sangrador, J
    Rodríguez, T
    [J]. SOLID STATE COMMUNICATIONS, 2005, 136 (04) : 224 - 227
  • [4] Luminescent spectroscopy and imaging of textured sprayed Er-doped ZnO films in the near ultraviolet and visible regions
    Bubendorff, J. L.
    Ebothe, J.
    El Hichou, A.
    Dounia, R.
    Addou, M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (01)
  • [5] Synthesis of ZnO: Ge nanocomposite thin films by plasma gas condensation
    Ceylan, A.
    Ali, J. M.
    Ozcan, S.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (02) : 424 - 428
  • [6] CO2 Laser irradiation of GeO2 planar waveguide fabricated by rf-sputtering
    Chiasera, A.
    Macchi, C.
    Mariazzi, S.
    Valligatla, S.
    Lunelli, L.
    Pederzolli, C.
    Rao, D. N.
    Somoza, A.
    Brusa, R. S.
    Ferrari, M.
    [J]. OPTICAL MATERIALS EXPRESS, 2013, 3 (09): : 1561 - 1570
  • [7] Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing
    Choi, WK
    Ho, V
    Ng, V
    Ho, YW
    Ng, SP
    Chim, WK
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (14) : 1 - 3
  • [8] Er3+/Yb3+-codoped silica-germania sputtered films:: structural and spectroscopic characterization
    Conti, G. Nunzi
    Chiasera, A.
    Brenci, M.
    Ferrari, M.
    Pelli, S.
    Sebastiani, S.
    Tosello, C.
    Righini, G. C.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (23-25) : 2585 - 2588
  • [9] Influence of doping rate in Er3+: ZnO films on emission characteristics
    Douglas, L.
    Mundle, R.
    Konda, R.
    Bonner, C. E.
    Pradhan, A. K.
    Sahu, D. R.
    Huang, J-L.
    [J]. OPTICS LETTERS, 2008, 33 (08) : 815 - 817
  • [10] Infrared photoluminescence from Er doped porous Si
    Henley, W
    Koshka, Y
    Lagowski, J
    Siejka, J
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 7848 - 7852
1234