Two-Dimensional Semiconductor Heterojunctions for Optoelectronics and Electronics

被引:9
|
作者
Wang, Qian [1 ]
Zhang, Lin [1 ]
Liu, Xuejuan [2 ]
Li, Sha [1 ]
机构
[1] Hubei Univ Educ, Hubei Engn Technol Res Ctr Environm Purificat Mat, Sch Phys & Mech & Elect Engn, Wuhan, Peoples R China
[2] Chengdu Normal Univ, Coll Phys & Engn, Chengdu, Peoples R China
关键词
2D semiconductor heterojunction; band alignment; strain; electric field; optoelectronics; ULTRAFAST CHARGE-TRANSFER; HETEROSTRUCTURE; STRAIN; JUNCTIONS; GRAPHENE; HYDROGEN; BANDGAP;
D O I
10.3389/fenrg.2021.802055
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Two-dimensional (2D) layered semiconductors are current research hotspots on account of their wide variety of applications in electronics and optoelectronics due to their particular ultrathin nature. In this review, the band alignment engineering in heterojunctions composed of 2D van der Waals (vdW) layered semiconductors and their device applications in optoelectronics are provided. Various approaches that induced adjustability of vdW heterojunctions are summarized, mainly including composition and thickness modulations, strain, and electric fields. Furthermore, their perspectives on future developments in optoelectronics and electronics devices based on the newly unique physical and chemical properties are outlined.
引用
收藏
页数:7
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