Superconductivity in Cu Co-Doped SrxBi2Se3 Single Crystals

被引：11

作者：

Kuntsevich, Aleksandr Yu. ^{[1
]}

Martovitskii, Victor P. ^{[1
]}

Rybalchenko, George V. ^{[1
]}

Selivanov, Yuri G. ^{[1
]}

Bannikov, Mikhail I. ^{[2
]}

Sobolevskiy, Oleg A. ^{[1
]}

Chigevskii, Evgenii G. ^{[1
]}

机构：

[1] RAS, PN Lebedev Phys Inst, Moscow 119991, Russia

[2] Natl Res Univ Higher Sch Econ, Moscow 101000, Russia

来源：

MATERIALS | 2019年 / 12卷 / 23期

基金：

俄罗斯科学基金会;

关键词：

topological insulators; topological superconductors; crystal structure; superconductivity; doping; X-ray diffraction; single crystals; TRANSPORT-PROPERTIES; GROWTH;

D O I：

10.3390/ma12233899

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, we grew Cu co-doped single crystals of a topological superconductor candidate SrxBi2Se3, and studied their structural and transport properties. We reveal that the addition of even as small an amount of Cu co-dopant as 0.6 atomic %, completely suppresses superconductivity in SrxBi2Se3. Critical temperature (similar to 2.7 K) is rather robust with respect to co-doping. We show that Cu systematically increases the electron density and lattice parameters a and c. Our results demonstrate that superconductivity in SrxBi2Se3-based materials is induced by significantly lower Sr doping level x < 0.02 than commonly accepted x 0.06, and it strongly depends on the specific arrangement of Sr atoms in the host matrix. The critical temperature in superconductive Sr-doped Bi2Se3 is shown to be insensitive to carrier density.

引用

页数：12

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