Four-state ferroelectric spin-valve

被引：36

作者：

Quindeau, Andy ^{[1
]}

Fina, Ignasi ^{[1
,2
]}

Marti, Xavi ^{[3
,4
]}

Apachitei, Geanina ^{[2
]}

Ferrer, Pilar ^{[5
]}

Nicklin, Chris ^{[5
]}

Pippel, Eckhard ^{[1
]}

Hesse, Dietrich ^{[1
]}

Alexe, Marin ^{[1
,2
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] ASCR, Inst Phys, Vvi, Prague 16253 6, Czech Republic

[4] CSIC, ICN, Ctr Invest Nanociencia & Nanotechnol ICN2, Barcelona 08193, Spain

[5] Diamond Light Source, Didcot OX11 0DE, Oxon, England

来源：

SCIENTIFIC REPORTS | 2015年 / 5卷

关键词：

GIANT MAGNETORESISTANCE; TUNNEL-JUNCTIONS;

D O I：

10.1038/srep09749

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. In this letter, we show that, without the deliberate introduction of such an AFM layer, this functionality is transferred to multiferroic tunnel junctions (MFTJ) allowing us to create a four-state resistive memory device. We observed that the ferroelectric/ferromagnetic interface plays a crucial role in the stabilization of the exchange bias, which ultimately leads to four robust electro tunnel electro resistance (TER) and tunnel magneto resistance (TMR) states in the junction.

引用

页数：7

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