共 7 条
- [1] Study of the homoepitaxial growth of GaAs on (631) oriented substrates [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1568 - 1571
- [2] Molecular beam epitaxial growth of GaAs on (631) oriented substrates [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (50-52): : L1556 - L1559
- [3] Photoreflectance and photoluminescence characterization of GaAs quantum wells grown by molecular beam epitaxy on flat and misoriented substrates [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 3923 - 3927
- [6] Steiner T, 2004, ART HOUSE SEMICOND M, P1