Enhanced annealing of the Z1/2 defect in 4H-SiC epilayers

被引：108

作者：

Storasta, Liutauras ^{[1
]}

Tsuchida, Hidekazu ^{[1
]}

Miyazawa, Tetsuya ^{[1
]}

Ohshima, Takeshi ^{[2
]}

机构：

[1] Cent Res Inst Electric Power Ind, Kanagawa 2400196, Japan

[2] Japan Atom Energy Agncy, Gunma 3701292, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 01期

关键词：

D O I：

10.1063/1.2829776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors investigated the application of the carbon-implantation/annealing method for the annealing of the main lifetime limiting defect Z(1/2) in thick 4H-SiC epilayers. Examination of different implantation doses and annealing temperatures showed that finding the optimum conditions is crucial for obtaining thick layers with carrier trap concentration below 10(11) cm(-3) in the whole 100 mu m epilayer. The carrier lifetime increased from less than 200 ns to over 1 mu s at room temperature in the samples annealed with the carbon-implanted layer. The thick 4H-SiC epilayers after the application of the carbon-implantaiion/annealing were confirmed to be applicable for fabrication of high-voltage bipolar devices and resulted in improved conductivity modulation. Possible annealing mechanisms are discussed in detail making a comparison between annealing of as-rown material and irradiated material. (c) 2008 American Institute of Physics.

引用

页数：7

共 26 条

[1] Ab initio study of the annealing of vacancies and interstitials in cubic SiC:: Vacancy-interstitial recombination and aggregation of carbon interstitials -: art. no. 235202 [J].

Bockstedte, M ;

Mattausch, A ;

Pankratov, O .

PHYSICAL REVIEW B, 2004, 69 (23) :235202-1

[2] Ab initio study of the migration of intrinsic defects in 3C-SiC -: art. no. 205201 [J].

Bockstedte, M ;

Mattausch, A ;

Pankratov, O .

PHYSICAL REVIEW B, 2003, 68 (20)

[3] THE WIDTH OF THE NON-STEADY STATE TRANSITION REGION IN DEEP LEVEL IMPURITY MEASUREMENTS [J].

BROTHERTON, SD .

SOLID-STATE ELECTRONICS, 1983, 26 (10) :987-990

[4] DETECTION OF MINORITY-CARRIER TRAPS USING TRANSIENT SPECTROSCOPY [J].

BRUNWIN, R ;

HAMILTON, B ;

JORDAN, P ;

PEAKER, AR .

ELECTRONICS LETTERS, 1979, 15 (12) :349-350

[5]

Dalibor T, 1996, INST PHYS CONF SER, V142, P517

[6] Radiation-induced defect centers in 4H silicon carbide [J].

Dalibor, T ;

Pensl, G ;

Kimoto, T ;

Matsunami, H ;

Sridhara, S ;

Devaty, RP ;

Choyke, WJ .

[7] Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation [J].

Danno, Katsunori ;

Nakamura, Daisuke ;

Kimoto, Tsunenobu .

APPLIED PHYSICS LETTERS, 2007, 90 (20)

[8] Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons [J].

Danno, Katsunori ;

Kimoto, Tsunenobu .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

[9] Impacts of growth parameters on deep levels in n-type 4H-SiC [J].

Danno, Katsunori ;

Hori, Tsutomu ;

Kimoto, Tsunenobu .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)

[10]

Gällström A, 2007, MATER SCI FORUM, V556-557, P371, DOI 10.4028/www.scientific.net/MSF.556-557.371

← 1 2 3 →