Suppression of Switching Crosstalk and Voltage Oscillations in a SiC MOSFET Based Half-Bridge Converter

被引：33

作者：

Zaman, Haider ^{[1
]}

Wu, Xiaohua ^{[1
]}

Zheng, Xiancheng ^{[1
]}

Khan, Shahbaz ^{[1
]}

Ali, Husan ^{[1
]}

机构：

[1] Northwestern Polytech Univ, Sch Automat, Xian 710000, Shaanxi, Peoples R China

来源：

ENERGIES | 2018年 / 11卷 / 11期

关键词：

SiC MOSFET; parasitic inductance; RC snubber; half-bridge converter; GATE DRIVER; DESIGN;

D O I：

10.3390/en11113111

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The silicon carbide (SiC) MOSFET is characterized by high operating voltage, temperature, switching frequency and efficiency which enables a converter to achieve high power density. However, at high switching frequency, the crosstalk phenomenon occurs when the gate voltage spike introduced by high dv/dt and voltage ringing forces false turn-on of SiC MOSFET which causes a crow-bar current thereby increasing switching losses. In order to increase the immunity against the crosstalk phenomenon in a half-bridge configuration, this paper presents a gate driver for SiC MOSFET capable of generating the negative turn-off voltage without using a negative power supply. In addition, the effect of parasitic inductances on the switching response is analyzed and an RC snubber is designed using high-frequency based circuit reduction technique to dampen the switching ringing. The performance of the proposed gate driver and the designed RC snubber is validated using simulation and experiment at the 1 MHz switching frequency. The results show that the proposed gate driver with RC snubber eliminates crosstalk by maintaining any spurious gate spike below the gate threshold voltage.

引用

页数：19

共 35 条

[1]

Abbatelli L., APPL NOTE FINE TUNE

[2]

[Anonymous], 2014, CISC VIS NETW IND GL

[3]

Anthon A, 2014, IEEE IND ELEC, P1854, DOI 10.1109/IECON.2014.7048754

[4]

Chen H, 2015, IEEE ENER CONV, P2254, DOI 10.1109/ECCE.2015.7309977

[5]