Top gate pentacene thin film transistor with spin-coated dielectric

被引：7

作者：

Kwon, Taegeun ^{[1
]}

Baek, Changhoon ^{[1
]}

Lee, Hong H. ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem & Biol Engn, Interdisciplinary Program Nanosci & Technol, Seoul 151742, South Korea

来源：

ORGANIC ELECTRONICS | 2007年 / 8卷 / 05期

关键词：

organic thin film transistor; top gate; pentacene; spin-coated dielectric; transfer patterning; grain size;

D O I：

10.1016/j.orgel.2007.03.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fabrication of top gate pentacene thin film transistor (TFT) is made possible with spin-coatable dielectrics by the technique presented here. Such fabrication has been impractical because of the ill effects a solvent can have on pentacene. A bilayer of pentacene on insulator that are coated on a mold is transferred to a glass substrate on which source and drain electrodes are defined. In the transfer process, pentacene is automatically patterned. This fabrication method allows for the channel length to be as small as photolithography would permit. (C) 2007 Elsevier B.V. All rights reserved.

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页码：615 / 620

页数：6

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