Shallow donor impurities in different shaped double quantum wells under the hydrostatic pressure and applied electric field

被引：16

作者：

Kasapoglu, E ^{[1
]}

Sari, H

Sokmen, I

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuz Eylul Univ, Dept Phys, Izmir, Turkey

来源：

PHYSICA B-CONDENSED MATTER | 2005年 / 362卷 / 1-4期

关键词：

hydrogenic impurities; double graded well; double triangle well; hydrostatic pressure;

D O I：

10.1016/j.physb.2005.01.475

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The combined electric field and hydrostatic pressure effects on the binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells are calculated by using a variational technique within the effective-mass approximation. The results have been obtained in the presence of an electric field applied along the growth direction as a function of hydrostatic pressure, the impurity position, barrier width and the geometric shape of the double quantum wells. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：56 / 61

页数：6

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