New tapered quantum-dot mode-locked laser diode with high peak power, low divergence and good beam quality

被引：0
|
作者：
Ruiz, M. [1 ]
Michel, N. [1 ]
Calligaro, M. [1 ]
Robert, Y. [1 ]
Krakowski, M. [1 ]
Nikitichev, D. I. [2 ]
Cataluna, M. A. [2 ]
Livshits, D. [3 ]
Rafailov, E. U. [2 ]
机构：
[1] Alcatel Thales III V Lab, RD 128, F-91767 Palaiseau, France
[2] Univ Dundee, Sch Engn, Dept Phys Mat, Dundee DD1 4HN, Scotland
[3] Innolume GmbH, D-44263 Dortmund, Germany
来源：
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2010年
基金：
英国工程与自然科学研究理事会;
关键词：
Tapered lasers; Quantum Dots; mode locking; gain guiding; peak power; divergence; beam quality;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With a fully gain guided quantum-dot tapered laser diode we demonstrate stable low beam divergence, high beam quality together with a record peak power of 2.6W under passive mode locking.
引用
收藏
页码：170 / +
页数：2
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