A K-BAND INJECTION-LOCKED FREQUENCY TRIPLER WITH INJECTION-ENHANCEMENT IN 130-nm CMOS

被引：0

作者：

Wang, Wei ^{[1
]}

Li, Wei ^{[1
]}

Li, Ning ^{[1
]}

Ren, Junyan ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Shanghai 201203, Peoples R China

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

K-band injection locked frequency tripler (ILFT) is proposed, analyzed, and implemented using 130-nm CMOS process. In the proposed ILFT, the injection enhancement technique can increase the injection ratio leading to a larger locking range. The simulation results show that the locking range reaches 2.1 GHz at 22.5 GHz center frequency with a 2-dBm input power. The proposed ILFT consumes 6.8 m W from 1 V supply voltage

引用

页数：3

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