Optical Properties of CdS-PVA Nanocomposites

被引:9
作者
Pattabi, Manjunatha [1 ]
Saraswathi, Amma B. [2 ]
机构
[1] Mangalore Univ, Dept Mat Sci, Mangalagangothri 574199, Karnataka, India
[2] St Agnes Coll, Dept Phys, Mangalore 575002, India
关键词
CdS nanoparticles; PVA; optical properties; photoluminescence; nanocomposites; NANOPARTICLES; PHOTOLUMINESCENCE; NANOCRYSTALS;
D O I
10.1163/092764410X490527
中图分类号
TB33 [复合材料];
学科分类号
摘要
Semiconductor-polymer nanocomposites, with good control over the nanoparticle size and their dispersion within the polymer matrix, can have applications in many optical and luminescent display devices. Cadmium sulphide (CdS) is the most popular semiconductor nanoparticle exhibiting size dependent properties due to its large exciton binding energy and its suitability for large scale production. The nanoparticles need to be passivated against aggregation with suitable capping agents, without sacrificing the desirable properties like transparency and flexibility of the polymer. Cadmium sulphide nanoparticles capped with polyvinyl pyrrolidone (PVP) are synthesized using cadmium nitrate (Cd(NO3)(2)) and hydrogen sulphide (H2S) as Cd2+ and S2- sources, respectively. CdS particles with sizes in the range of 5-6 nm are prepared in methanol and the solvent is removed using a rotary evaporator. CdS powder is dispersed in polyvinyl alcohol (PVA) solution with dimethyl formamide (DMF) as solvent to get (PVP-CdS)-PVA nanocomposite film of about 0.2 mm thickness. This has been characterized by powder X-ray diffraction (XRD), optical absorption studies, transmission electron microscopy (TEM), differential scanning calorimetry (DSC) and photoluminescence (PL). Particle size does not change due to incorporation in the polymer matrix and the polymer retains its transparency and flexibility. The nanocomposite shows good photoluminescence property with stronger band edge emission than defect related emission. The latter could be quenched completely by optimizing the PVP content. Irradiation of the nanocomposite with 8 MeV electrons at a dose of 100 kGy could effectively quench the defect related emission. (C) Koninklijke Brill NV, Leiden, 2010
引用
收藏
页码:103 / 111
页数:9
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