Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire

被引：195

作者：

Jang, A-Rang ^{[1
,2
,3
]}

Hong, Seokmo ^{[1
]}

Hyun, Chohee ^{[2
]}

Yoon, Seong In ^{[2
]}

Kim, Gwangwoo ^{[2
]}

Jeong, Hu Young ^{[4
]}

Shin, Tae Joo ^{[4
]}

Park, Sung O. ^{[6
]}

Wong, Kester ^{[6
]}

Kwak, Sang Kyu ^{[6
,7
]}

Park, Noejung ^{[5
,7
]}

Yu, Kwangnam ^{[8
]}

Choi, Eunjip ^{[8
]}

Mishchenko, Artem

Withers, Freddie

Novoselov, Kostya S.

Lim, Hyunseob ^{[1
,3
,7
]}

Shin, Hyeon Suk ^{[1
,2
,3
,7
]}

机构：

[1] UNIST, Dept Chem, UNIST Gil 50, Ulsan 44919, South Korea

[2] UNIST, Dept Energy Engn, UNIST Gil 50, Ulsan 44919, South Korea

[3] UNIST, Low Dimens Carbon Mat, UNIST Gil 50, Ulsan 44919, South Korea

[4] UNIST, UCRF, UNIST Gil 50, Ulsan 44919, South Korea

[5] UNIST, Dept Phys, UNIST Gil 50, Ulsan 44919, South Korea

[6] UNIST, Sch Energy & Chem Engn, UNIST Gil 50, Ulsan 44919, South Korea

[7] IBS, Ctr Multidimens Carbon Mat, Ulsan 44919, South Korea

[8] Univ Seoul, Dept Phys, Seoul 02504, South Korea

来源：

NANO LETTERS | 2016年 / 16卷 / 05期

基金：

英国工程与自然科学研究理事会; 新加坡国家研究基金会;

关键词：

Hexagonal boron nitride; chemical vapor deposition; ammonia borane; sapphire substrate; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; HIGH-QUALITY; MONOLAYER; GRAPHENE; TRANSISTORS; MOS2; WS2; CRYSTALLINE; BANDGAP;

D O I：

10.1021/acs.nanolett.6b01051

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

引用

页码：3360 / 3366

页数：7

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