The effect of the CH4 plasma treatment on deposited SiOC(-H) films with low dielectric constant prepared by using TMS/O2 PECVD

被引：18
|
作者：
Yang, CS
Yu, YH
Lee, HJ
Lee, KM
Choi, CK
机构：
[1] Jeju Natl Univ, Dept Phys, Cheju 690756, South Korea
[2] Jeju Natl Univ, Fac Mech Energy & Prod Engn, Res Inst Adv Technol, Cheju 690756, South Korea
[3] Jeju Natl Univ, Dept Elect & Elect Engn, Res Inst Adv Technol, Cheju 690756, South Korea
来源：
THIN SOLID FILMS | 2005年 / 475卷 / 1-2期
关键词：
low-k; O-2; ashing; plasma treatment; breakdown voltage;
D O I：
10.1016/j.tsf.2004.07.019
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The low dielectric SiOC(-H) films can be damaged by oxygen plasma during photoresist stripping. In this work, we have studied the CH4 plasma treatment to improve the characteristics of the SiOC(-H) film. Posttreated SiOC(-H) film in CH4 plasma showed the decreased leakage current density of 1 A/cm(2), which was lower two to three orders of magnitude than that of nontreated SiOC(-H) films. Unlike the nontreated SiOC(-H) films, Fourier transform infrared (FT-IR) absorbance spectrum of posttreated SiOC(-H) film remained almost unchanged after O-2 ashing. The dielectric constant of the treated SiOC(-H) film also did not change much. The CH4 plasma treatment can provide additional hydrogen and carbon to passivate the inner structure of SiOC(-H) films. Therefore, the properties of SiOC(-H) films are significantly enhanced by CH4 plasma treatment. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：150 / 154
页数：5
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