The effects of resistive switching were investigated in composite films based on multifunctional nonconjugated polymers such as poly(9-vinylcarbazole)-PVK mixed with particles of graphene (Gr) and graphene oxide (GO). The concentration of Gr and GO particles in the PVK matrix was varied in the range of 1-3 wt%, which is close to the percolation threshold in these systems. It was found that the effect of switching in structures of the form Al/PVK:Gr(GO)/ITO/PET manifests itself in a sharp change of the electrical resistance of the composite film from a low-conducting state to a relatively high-conducting state when applying a bias to Al-ITO electrodes of similar to 0.2-0.4V, which is below the threshold switching voltages for similar composites. The cyclic voltammetric measurements of PVK:Gr(GO) films were carried out. It was found that the potential of redox transition of Gr/GO belongs to the interval of redox-switching voltage of PVK:Gr(GO)/ITO/PET composite films with effect of the resistive switching. The possible mechanism of the resistive switching, which is associated with the redox processes as well as with processes of capture and accumulation of charge carriers by Gr (GO) particles introduced into the matrices of the PVK polymer due to reduction/oxidation processes is discussed. (C) 2016 Elsevier B.V. All rights reserved.
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Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
Geim, A. K.
Novoselov, K. S.
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Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Harada, T.
Ohkubo, I.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Ohkubo, I.
Tsubouchi, K.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Tsubouchi, K.
Kumigashira, H.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Japan Sci & Technol Corp JST, CREST, Kawaguchi, Saitama 3320012, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Kumigashira, H.
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Ohnishi, T.
Lippmaa, M.
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Univ Tokyo, Inst Solid State Phys, Chiba 2278581, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Lippmaa, M.
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Matsumoto, Y.
Koinuma, H.
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Univ Tokyo, Grad Sch Frontier Sci, Chiba 2778568, Japan
Japan Sci & Technol Corp JST, CREST, Kawaguchi, Saitama 3320012, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Koinuma, H.
Oshima, M.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Japan Sci & Technol Corp JST, CREST, Kawaguchi, Saitama 3320012, Japan
Univ Tokyo, Synchrotron Radiat Res Org, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
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Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
Geim, A. K.
Novoselov, K. S.
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Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, EnglandUniv Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
机构:
Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Harada, T.
Ohkubo, I.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Ohkubo, I.
Tsubouchi, K.
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h-index: 0
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Tsubouchi, K.
Kumigashira, H.
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Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Japan Sci & Technol Corp JST, CREST, Kawaguchi, Saitama 3320012, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Kumigashira, H.
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Ohnishi, T.
Lippmaa, M.
论文数: 0引用数: 0
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Univ Tokyo, Inst Solid State Phys, Chiba 2278581, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Lippmaa, M.
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Matsumoto, Y.
Koinuma, H.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Grad Sch Frontier Sci, Chiba 2778568, Japan
Japan Sci & Technol Corp JST, CREST, Kawaguchi, Saitama 3320012, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Koinuma, H.
Oshima, M.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
Japan Sci & Technol Corp JST, CREST, Kawaguchi, Saitama 3320012, Japan
Univ Tokyo, Synchrotron Radiat Res Org, Bunkyo Ku, Tokyo 1138656, JapanUniv Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan