The redox nature of the resistive switching in nanocomposite thin films based on graphene (graphene oxide) nanoparticles and poly (9-vinylcarbazole)

被引：25

作者：

Aleshin, Andrey N. ^{[1
]}

Krylov, Pavel S. ^{[1
]}

Berestennikov, Alexander S. ^{[1
]}

Shcherbakov, Igor P. ^{[1
]}

Petrov, Vasily N. ^{[1
]}

Kondratiev, Veniamin V. ^{[2
]}

Eliseeva, Svetlana N. ^{[2
]}

机构：

[1] Ioffe Inst, 26 Polytech Skaya Str, St Petersburg 194021, Russia

[2] St Petersburg State Univ, Univ Skaya Nab 7-9, St Petersburg 199034, Russia

来源：

SYNTHETIC METALS | 2016年 / 217卷

基金：

俄罗斯基础研究基金会;

关键词：

Conducting polymers; Graphene; Graphene oxide; Cyclic voltammetric measurements; Transport mechanism; COMPOSITE FILMS; MEMORY;

D O I：

10.1016/j.synthmet.2016.03.011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of resistive switching were investigated in composite films based on multifunctional nonconjugated polymers such as poly(9-vinylcarbazole)-PVK mixed with particles of graphene (Gr) and graphene oxide (GO). The concentration of Gr and GO particles in the PVK matrix was varied in the range of 1-3 wt%, which is close to the percolation threshold in these systems. It was found that the effect of switching in structures of the form Al/PVK:Gr(GO)/ITO/PET manifests itself in a sharp change of the electrical resistance of the composite film from a low-conducting state to a relatively high-conducting state when applying a bias to Al-ITO electrodes of similar to 0.2-0.4V, which is below the threshold switching voltages for similar composites. The cyclic voltammetric measurements of PVK:Gr(GO) films were carried out. It was found that the potential of redox transition of Gr/GO belongs to the interval of redox-switching voltage of PVK:Gr(GO)/ITO/PET composite films with effect of the resistive switching. The possible mechanism of the resistive switching, which is associated with the redox processes as well as with processes of capture and accumulation of charge carriers by Gr (GO) particles introduced into the matrices of the PVK polymer due to reduction/oxidation processes is discussed. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：7 / 13

页数：7

共 23 条

[1] Memory Effects in Field-Effect Transistor Structures Based on Composite Films of Polyepoxypropylcarbazole with Gold Nanoparticles [J].

Aleshin, A. N. ;

Fedichkin, F. S. ;

Gusakov, P. E. .

PHYSICS OF THE SOLID STATE, 2011, 53 (11) :2370-2374

[2] Poly(9-vinylcarbazole)-graphene oxide composite field-effect transistors with enhanced mobility [J].

Aleshin, Andrey N. ;

Shcherbakov, Igor P. ;

Komolov, Alexei S. ;

Petrov, Vasily N. ;

Trapeznikova, Irina N. .

ORGANIC ELECTRONICS, 2015, 16 :186-194

[3] Blue Photoluminescence from Chemically Derived Graphene Oxide [J].

Eda, Goki ;

Lin, Yun-Yue ;

Mattevi, Cecilia ;

Yamaguchi, Hisato ;

Chen, Hsin-An ;

Chen, I-Sheng ;

Chen, Chun-Wei ;

Chhowalla, Manish .

ADVANCED MATERIALS, 2010, 22 (04) :505-+

[4] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[5] Trap-controlled space-charge-limited current mechanism in resistance switching at Al/Pr0.7Ca0.3MnO3 interface [J].

Harada, T. ;

Ohkubo, I. ;

Tsubouchi, K. ;

Kumigashira, H. ;

Ohnishi, T. ;

Lippmaa, M. ;

Matsumoto, Y. ;

Koinuma, H. ;

Oshima, M. .

APPLIED PHYSICS LETTERS, 2008, 92 (22)

[6] A new structural model for graphite oxide [J].

He, HY ;

Klinowski, J ;

Forster, M ;

Lerf, A .

CHEMICAL PHYSICS LETTERS, 1998, 287 (1-2) :53-56

[7] Analysis on switching mechanism of graphene oxide resistive memory device [J].

Hong, Seul Ki ;

Kim, Ji Eun ;

Kim, Sang Ouk ;

Cho, Byung Jin .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)

[8] Polymeric semiconductor/graphene hybrid field-effect transistors [J].

Huang, Jia ;

Hines, Daniel R. ;

Jung, Byung Jun ;

Bronsgeest, Merijntje S. ;

Tunnell, Andrew ;

Ballarotto, Vince ;

Katz, Howard E. ;

Fuhrer, Michael S. ;

Williams, Ellen D. ;

Cumings, John .

ORGANIC ELECTRONICS, 2011, 12 (09) :1471-1476

[9] Carrier transport in two-dimensional graphene layers [J].

Hwang, E. H. ;

Adam, S. ;

Das Sarma, S. .

PHYSICAL REVIEW LETTERS, 2007, 98 (18)

[10] Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets [J].

Joung, Daeha ;

Chunder, A. ;

Zhai, Lei ;

Khondaker, Saiful I. .

APPLIED PHYSICS LETTERS, 2010, 97 (09)

← 1 2 3 →