Transmission Electron Microscope Study of Screen-Printed Ag Contacts on Crystalline Si Solar Cells

被引:21
|
作者
Jeong, Myung-Il [1 ]
Park, Sung-Eun [2 ]
Kim, Dong-Hwan [2 ]
Lee, Joon-Sung [3 ]
Park, Yun-Chang [4 ]
Ahn, Kwang-Soon [5 ]
Choi, Chel-Jong [1 ,6 ]
机构
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
[2] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[3] Hyundai Heavy Ind Co Ltd, Electro Elect Syst Div, Yongin 446716, South Korea
[4] Natl Nanofab Ctr, Measurement & Anal Div, Taejon 305343, South Korea
[5] Yeungnam Univ, Sch Display & Chem Engn, Gyongsan 712749, South Korea
[6] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea
关键词
THICK-FILM CONTACTS; EMITTERS; INTERFACE; GROWTH;
D O I
10.1149/1.3473812
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Microstructural and chemical properties of screen-printed Ag contacts on an n(+) emitter surface in crystalline Si solar cells are investigated using a transmission electron microscope. The Pb-based glass layer, where many Ag precipitates are randomly distributed, is formed between a Ag thick film and textured Si. For both textured and nontextured Si surfaces, the Ag crystallites are epitaxially grown on Si with an abrupt interface along the {111} atomic plane. Based on high resolution electron microscopy images combined with fast Fourier transform patterns, the registry of Ag on Si driven by a geometrical matching condition leads to minimization of the effective lattice mismatch between Ag and Si, resulting in the formation of a Ag/Si epitaxial superlattice near the interface region. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3473812] All rights reserved.
引用
收藏
页码:H934 / H936
页数:3
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