Combined Surface Activated Bonding Technique for Hydrophilic SiO2-SiO2 and Cu-Cu Bonding

被引：16
作者：
He, Ran [1 ]
Fujino, Masahisa [1 ]
Yamauchi, Akira [2 ]
Suga, Tadatomo [1 ]
机构：
[1] Univ Tokyo, Dept Precis Engn, Tokyo 1138656, Japan
[2] Bondtech Co Ltd, Kyoto 611003, Japan
来源：
SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14 | 2016年 / 75卷 / 09期
关键词：
D O I：
10.1149/07509.0117ecst
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wafer bonding with high quality (such as high strength, void-less interface, and low-resistance vertical electrical interconnects) obtained at low temperatures is highly desired for 3D integration of microsystems. This paper reports a combined surface activated bonding (SAB) technique for improvement of the bonding quality of SiO2-SiO2 pairs bonded at 200 degrees C. The present bonding technique employs a combination of surface irradiation using a Sicontaining Ar beam and prebonding attach-detach procedure prior to bonding in vacuum, followed by postbonding annealing in ambient pressure. The bonding method has also been found effective for SiO2-SiNx and Cu-Cu bonding at 200 degrees C. Results of bonding strength measurements, transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS) observations are reported and discussed to understand the present technique. The feasibility of this bonding technique for Cu/SiO2 and Cu/SiO2/SiNx hybrid bonding is also discussed.
引用
收藏
页码：117 / 128
页数：12
相关论文
共 22 条
[1]  
[Anonymous], 2008, ECS Trans, DOI DOI 10.1149/1.2982908
[2]   Preferential sputtering effects in thin film processing [J].
Berg, S ;
Katardjiev, IV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :1916-1925
[3]   An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization [J].
Di Cioccio, L. ;
Gueguen, P. ;
Taibi, R. ;
Landru, D. ;
Gaudin, G. ;
Chappaz, C. ;
Rieutord, F. ;
de Crecy, F. ;
Radu, I. ;
Chapelon, L. L. ;
Clavelier, L. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (06) :P81-P86
[4]  
Dragoi V., 2006, ECS Transactions, V3, P147
[5]   Water Stress Corrosion in Bonded Structures [J].
Fournel, F. ;
Martin-Cocher, C. ;
Radisson, D. ;
Larrey, V. ;
Beche, E. ;
Morales, C. ;
Delean, P. A. ;
Rieutord, F. ;
Moriceau, H. .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (05) :P124-P130
[6]   Molecular mechanisms causing anomalously high thermal expansion of nanoconfined water [J].
Garofalin, Stephen H. ;
Mahadevan, Thiruvilla S. ;
Xu, Shuangyan ;
Scherer, George W. .
CHEMPHYSCHEM, 2008, 9 (14) :1997-2001
[7]   Combined Surface Activated Bonding Technique for Low-Temperature Cu/Dielectric Hybrid Bonding [J].
He, Ran ;
Fujino, Masahisa ;
Yamauchi, Akira ;
Wang, Yinghui ;
Suga, Tadatomo .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (07) :P419-P424
[8]   Combined surface-activated bonding technique for low-temperature hydrophilic direct wafer bonding [J].
He, Ran ;
Fujino, Masahisa ;
Yamauchi, Akira ;
Suga, Tadatomo .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
[9]   Novel hydrophilic SiO2 wafer bonding using combined surface-activated bonding technique [J].
He, Ran ;
Fujino, Masahisa ;
Yamauchi, Akira ;
Suga, Tadatomo .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (03)
[10]   Copper oxide reduction through vacuum annealing [J].
Lee, SY ;
Mettlach, N ;
Nguyen, N ;
Sun, YM ;
White, JM .
APPLIED SURFACE SCIENCE, 2003, 206 (1-4) :102-109
123