A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range

Self-catalyzed growth of axial GaAs1-xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 mu m poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (T-sub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher T-sub = 620 degrees C and then continuing the growth at lower T-sub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 mu m at room temperature.