Poly(ferrocenylsilanes) as etch barriers in nano and microlithographic applications

被引:13
作者
Hempenius, MA [1 ]
Lammertink, RGH [1 ]
Péter, M [1 ]
Vancso, GJ [1 ]
机构
[1] Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands
关键词
block copolymers; nanolithography; organometallic polymers; polyelectrolytes; reactive ion etching;
D O I
10.1002/masy.200390175
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Thin films of organic-organometallic block copolymers are shown to be efficient self-assembled templates for nanolithography. Block copolymers composed of organic blocks such as polyisoprene or polystyrene and a poly(ferrocenylsilane) block microphase separate to form a monolayer of densely packed organometallic spheres in an organic matrix. The high resistance of the organometallic phase to reactive ion etching enables the nanoscale patterns to be transferred into silicon substrates, forming nanostructured surfaces. Electrostatic self-assembly of poly(ferrocenylsilane) polyanions and polycations is discussed as a means to form laterally structured organometallic multilayer thin films by area-selective adsorption onto chemically patterned substrates.
引用
收藏
页码:45 / 56
页数:12
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