Manufacturing process of 4 mask a-Si TFT panel by one step

被引：0
|
作者：
Yoo, S. Y. [1 ]
Choi, H. S. [1 ]
Ryu, J. I. [1 ]
Lee, W. B. [1 ]
Lee, J. Y. [1 ]
机构：
[1] BOE Hydis Technol Co Ltd, SBU Res Ctr, Ichon Si 467701, Gyeonggi Do, South Korea
来源：
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Improved 4-Mask process applied with Al based multi-layer data line was developed in order to reduce manufacturing process. This process has several issues on n(+) a-Si:H remain and Al corrosion because of I-step dry etch with Mo/Al/Mo data line. However, it brings a matter to a successfully settlement and meets with good results about an array process and display performance as new dry etch. Moreover, plasma treatment process are applied to the dry etch process.
引用
收藏
页码：1121 / 1124
页数：4
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