Manufacturing process of 4 mask a-Si TFT panel by one step

被引：0
|
作者：
Yoo, S. Y. [1 ]
Choi, H. S. [1 ]
Ryu, J. I. [1 ]
Lee, W. B. [1 ]
Lee, J. Y. [1 ]
机构：
[1] BOE Hydis Technol Co Ltd, SBU Res Ctr, Ichon Si 467701, Gyeonggi Do, South Korea
来源：
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Improved 4-Mask process applied with Al based multi-layer data line was developed in order to reduce manufacturing process. This process has several issues on n(+) a-Si:H remain and Al corrosion because of I-step dry etch with Mo/Al/Mo data line. However, it brings a matter to a successfully settlement and meets with good results about an array process and display performance as new dry etch. Moreover, plasma treatment process are applied to the dry etch process.
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页码：1121 / 1124
页数：4
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