Memory Effects in Field-Effect Transistor Structures Based on Composite Films of Polyepoxypropylcarbazole with Gold Nanoparticles

The memory effects in field-effect transistor structures with an active layer based on composite films of a semiconductor polymer, i.e., the carbazole derivative and gold nanoparticles, manifesting themselves in the hysteresis of the transient characteristics of the transistor have been studied. It has been shown that the observed effects are associated with the features of transport in the polymer-gold nanoparticle structure, where the gold particles serve as a medium of charge carrier collection (accumulation). The data write-erase mechanism based on conductivity modulation of the working channel of the field-effect transistor by the gate voltage have been discussed.