Lateral discrete power MOSFET: Enabling technology for next-generation, MHz-frequency, high-density DC/DC converters

DC/DC converters to power future CPU or DSP cores mandate low-voltage power MOSFETs with ultra low on-resistance and gate charge. Conventional trench MOSFETs; cannot meet the challenge. We introduce an alternative device technology, the discrete lateral power MOSFETs, to overcome the limitations associated with the vertical trench or planar MOSFETs. We report a family of 7V, 20V, and 30V lateral discrete power MOSFETs with figures of merit 2-3 times better than the state-of-the-art trench MOSFETs. We have developed an innovative metal interconnect and chip-scale packaging approach to overcome the "scaling barrier" which limits the chip size and current rating of the traditional lateral power devices. The lateral MOSFETs were designed and fabricated with a simplified CMOS process, and packaged in flip-chip forms using a wafer bumping technology. Lateral discrete power MOSFETs will become a viable enabling technology for next-generation, MHz-frequency, high-density DC/DC converters.