Diamond films grown without seeding treatment and bias by hot-filament CVD system

被引:9
作者
Ali, M. [1 ]
Urgen, M. [2 ]
机构
[1] COMSATS Inst Informat Technol CIIT, Dept Phys, Islamabad, Pakistan
[2] Istanbul Tech Univ, Dept Met & Mat Engn, TR-34469 Istanbul, Turkey
关键词
Thin films; Hot-filament CVD; Surface treatment; Crystal structure; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; ENHANCED NUCLEATION; NANOCRYSTALLINE DIAMOND; RAMAN-SPECTRUM; MECHANISM; HYDROGEN; PLASMA; CRYSTALLINE; MICROSCOPY;
D O I
10.1016/j.solidstatesciences.2012.01.015
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Diamond film growth without seeding treatment has been the subject of numerous studies. In the present study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely, "dry ultrasonic treatment", was introduced in which full coverage of diamond film was achieved on unseeded substrate. For comparison, one substrate was seeded with 5 mu m diamond particles, prior to deposition. The resulting diamond films were examined through standard characterization tools and distinct features were observed in each film. Here we present the results of uniform and high purity diamond film, free from nano-sized grains, which is grown without seeding treatment and is expected to be potential candidate for electro-optical applications, particularly as heat sinks. (C) 2012 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:540 / 544
页数:5
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