Cross-linkable aromatic amines as materials for insoluble hole-transporting layers in light-emitting devices

被引：35

作者：

Lengvinaite, S. ^{[1
]}

Grazulevicius, J. V. ^{[1
]}

Grigalevicius, S. ^{[1
]}

Zhang, B. ^{[2
]}

Yang, J. ^{[2
]}

Xie, Z. ^{[2
]}

Wang, Lixiang ^{[2
]}

机构：

[1] Kaunas Univ Technol, Dept Organ Technol, LT-50254 Kaunas, Lithuania

[2] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

来源：

SYNTHETIC METALS | 2008年 / 158卷 / 06期

关键词：

aromatic amine; cross-linkable material; ionisation potential; light-emitting diode;

D O I：

10.1016/j.synthmet.2008.01.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series of cross-linkable aromatic amines has been synthesized by the multi-step synthetic rout. Full characterization of their structure by H-1 NMR-, IR- and mass spectrometry is presented. The synthesized materials were examined by various techniques including differential scanning calorimetry, thermogravimetry, UV and electron photoemission spectrometry. The electron photoemission spectra of the layers showed their ionisation potentials of 5.1-5.2 eV. One of the derivatives was used for the preparation of insoluble hole-transporting layers by photoinduced polymerization. The layers obtained were tested in multilayer light-emitting diodes. The device-containing hole-transporting layer of PEDOT/cross-linked network exhibited the best overall performance with a turn-on voltage of 5 V, a maximum photometric efficiency of 2.8 cd/A and a maximum brightness of ca. 5600 cd/m(2). (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：213 / 218

页数：6

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