Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs

被引：27
作者：
Kuo, Chien-Ting [1 ,4 ]
Hsu, Lung-Hsing [1 ,4 ]
Huang, Bo-Hsin [2 ]
Kuo, Hao-Chung [2 ]
Lin, Chien-Chung [3 ]
Cheng, Yuh-Jen [4 ]
机构：
[1] Natl Chiao Tung Univ, Coll Photon, Inst Lighting & Energy Photon, Tainan 71150, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Coll Photon, Inst Photon Syst, Tainan 71150, Taiwan
[4] Acad Sinica, Res Ctr Appl Sci, 128 Sect 2,Acad Rd, Taipei 115, Taiwan
来源：
APPLIED OPTICS | 2016年 / 55卷 / 26期
关键词：
EMITTING-DIODES; ARRAYS; ENHANCEMENT; IMPROVEMENT;
D O I：
10.1364/AO.55.007387
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The influence of the microstructure geometry of patterned sapphire substrates (PSS) on the light extraction efficiency (LEE) of GaN light-emitting diodes (LEDs) is numerically analyzed. Cone structures of various dimensions are studied, along with dome and mixed microstructures. LEE is found to mainly depend on the microstructure surface slope. LEE rises quickly with slope and flattens out when the slope exceeds 0.6. Scaling down the microstructure has little effect on LEE. Light rays are found to travel longer distances in PSS LEDs, as compared with LEDs grown on a flat substrate. Keeping GaN absorption loss low is important for LEE optimization. (C) 2016 Optical Society of America
引用
收藏
页码：7387 / 7391
页数：5
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