Influence of Sm and Nb on the structural, electric, magnetic and magneto-electric properties of BaTiO3-Li0.5Fe2.5O4 composite ceramics grown by the conventional solid state technique
The Sm and Nb doped BaTiO3-Li0.5Fe2.5O4 composite ceramics having chemical formulae (90)BaTi(1-2x)NbxSmxO3+(10) Li0.5Fe2.5O4 (x=0, 0.05 and 0.1) were synthesized using conventional solid state technique. The structural, morphological, magnetic, dielectric, ferroelectric and magneto-electric propertiesof composites have been studied. The XRD measurement reveals the absence of peaks pertaining to impurities and strongly confirms the high crystalline nature of all the composites. From FESEM images, the average grain size of composites increases with increase in the concentration of Nb and Sm. The VSM studies confirm the soft magnetic nature of all the composites. The dielectric measurements confirm the increase in the transition temperature (T-c) of the BTL composite with an increase in the concentration of Nb and Sm. The P-E studies confirm that the ferroelectric nature of the BTL composite softens after doping Nb and Sm in it. The ME voltage coefficient value confirms the uniform growth of grains in all the composites and reveals a strong interaction between ferroelectric and magnetic orders.
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
Du, Guo-Ping
Hu, Zhi-Juan
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
Hu, Zhi-Juan
Han, Qi-Feng
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
Han, Qi-Feng
Qin, Xiao-Mei
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
Qin, Xiao-Mei
Shi, Wang-Zhou
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Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
机构:
Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
Du, Guo-Ping
Hu, Zhi-Juan
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机构:
Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
Hu, Zhi-Juan
Han, Qi-Feng
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机构:
Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
Han, Qi-Feng
Qin, Xiao-Mei
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机构:
Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China
Qin, Xiao-Mei
Shi, Wang-Zhou
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机构:
Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Devices, Shanghai 200234, Peoples R China