Nitride-based LEDs with p-InGaN capping layer

被引：54

作者：

Chang, SJ ^{[1
]}

Chen, CH

Chang, PC

Su, YK

Chen, PC

Jhou, YD

Hung, H

Wang, SM

Huang, BR

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Taiwan

[5] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 12期

关键词：

capping layer; electroluminescence (EL) intensity; hole concentration; InGaN; light-emitting diodes (LED); operation voltage;

D O I：

10.1109/TED.2003.820131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based light-emitting diodes (LEDs) with Mg-doped In0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In0.23Ga0.77N layer on top of the p-GaN layer. Furthermore it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.

引用

页码：2567 / 2570

页数：4

共 18 条

[1] High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Chi, GC ;

Sheu, JK ;

Chen, JF .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :284-288

[2] High brightness green light emitting diodes with charge asymmetric resonance tunneling structure [J].

Chen, CH ;

Su, YK ;

Chang, SJ ;

Chi, GC ;

Sheu, JK ;

Chen, JF ;

Liu, CH ;

Liaw, YH .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (03) :130-132

[3] GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Chi, GC ;

Chi, JY ;

Chang, CA ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) :848-850

[4] Vertical high quality mirrorlike facet of GaN-based device by reactive ion etching [J].

Chen, CHS ;

Chang, SJ ;

Su, YKI ;

Chi, GC ;

Sheu, JK ;

Lin, IC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B) :2762-2764

[5] Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers [J].

Gessmann, T ;

Li, YL ;

Waldron, EL ;

Graff, JW ;

Schubert, EF ;

Sheu, JK .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :986-988

[6] Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-xN/GaN superlattices [J].

Goepfert, ID ;

Schubert, EF ;

Osinsky, A ;

Norris, PE ;

Faleev, NN .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :2030-2038

[7] Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films [J].

Ho, JK ;

Jong, CS ;

Chiu, CC ;

Huang, CN ;

Shih, KK ;

Chen, LC ;

Chen, FR ;

Kai, JJ .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4491-4497

[8] Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layers [J].

Kinoshita, A ;

Hirayama, H ;

Ainoya, M ;

Aoyagi, Y ;

Hirata, A .

APPLIED PHYSICS LETTERS, 2000, 77 (02) :175-177

[9] Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices [J].

Kozodoy, P ;

Hansen, M ;

DenBaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1999, 74 (24) :3681-3683

[10] Increased electrical activity of Mg-acceptors in AlxGa1-xN/GaN superlattices [J].

Kumakura, K ;

Kobayashi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB) :L1012-L1014

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