Nitride-based LEDs with p-InGaN capping layer

被引：54
|
作者：
Chang, SJ [1 ]
Chen, CH
Chang, PC
Su, YK
Chen, PC
Jhou, YD
Hung, H
Wang, SM
Huang, BR
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan
[4] Natl Yunlin Univ Sci & Technol, Inst Elect & Informat Engn, Touliu 640, Taiwan
[5] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 640, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 12期
关键词：
capping layer; electroluminescence (EL) intensity; hole concentration; InGaN; light-emitting diodes (LED); operation voltage;
D O I：
10.1109/TED.2003.820131
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nitride-based light-emitting diodes (LEDs) with Mg-doped In0.23Ga0.77N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In0.23Ga0.77N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In0.23Ga0.77N layer on top of the p-GaN layer. Furthermore it was found that output intensity of LEDs with In0.23Ga0.77N capping layer was much larger, particularly at elevated temperatures.
引用
收藏
页码：2567 / 2570
页数：4
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