Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors

被引：54

作者：

Shigekawa, N ^{[1
]}

Shiojima, K ^{[1
]}

Suemitsu, T ^{[1
]}

机构：

[1] NTT, Photon Lab, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.1398332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectral analysis of the electroluminesence (EL) of AlGaN/GaN high-electron-mobility transistors is reported. The shape of the EL spectra is completely different from the shape of the photoluminescence spectrum. The wavelength for the peak of the EL spectrum gets shorter when the gate-bias voltage is decreased. Its intensity shows a bell shape when the gate-bias voltage is swept. These features suggest that the EL signal is due to the intraband transition of the channel electrons in the high-field region at the drain edge. (C) 2001 American Institute of Physics.

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页码：1196 / 1198

页数：3

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共 14 条

[1] Evaluation of effective electron velocity in AlGaN/GaN HEMTs [J].

Akita, M ;

Kishimoto, S ;

Maezawa, K ;

Mizutani, T .

ELECTRONICS LETTERS, 2000, 36 (20) :1736-1737

[2] Gate length scaling for Al0.2Ga0.8N/GaN HJFETs:: Two-dimensional full band Monte Carlo simulation including polarization effect [J].

Ando, Y ;

Contrata, W ;

Samoto, N ;

Miyamoto, H ;

Matsunaga, K ;

Kuzuhara, M ;

Kunihiro, K ;

Kasahara, K ;

Nakayama, T ;

Takahashi, Y ;

Hayama, N ;

Ohno, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (10) :1965-1972

[3] Measurement of drift mobility in AlGaN GaN heterostructure field-effect transistor [J].

Dang, XZ ;

Asbeck, PM ;

Yu, ET ;

Sullivan, GJ ;

Chen, MY ;

McDermott, BT ;

Boutros, KS ;

Redwing, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (25) :3890-3892

[4] Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors [J].

Gradinaru, G ;

Khan, MA ;

Kao, NC ;

Sudarshan, TS ;

Chen, Q ;

Yang, J .

APPLIED PHYSICS LETTERS, 1998, 72 (12) :1475-1477

[5] Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN [J].

Kolnik, J ;

Oguzman, IH ;

Brennan, KF ;

Wang, R ;

Ruden, PP .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) :8838-8840

[6] ELECTRONIC TRANSPORT STUDIES OF BULK ZINCBLENDE AND WURTZITE PHASES OF GAN BASED ON AN ENSEMBLE MONTE-CARLO CALCULATION INCLUDING A FULL ZONE BAND-STRUCTURE [J].

KOLNIK, J ;

OGUZMAN, IH ;

BRENNAN, KF ;

WANG, RP ;

RUDEN, PP ;

WANG, Y .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) :1033-1038

[7] Experimental evaluation of impact ionization coefficients in GaN [J].

Kunihiro, K ;

Kasahara, K ;

Takahashi, Y ;

Ohno, Y .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (12) :608-610

[8] GaN: Processing, defects, and devices [J].

Pearton, SJ ;

Zolper, JC ;

Shul, RJ ;

Ren, F .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :1-78

[9] Optical characterization of impact ionization in flip-chip-bonded InP-based high electron mobility transistors [J].

Shigekawa, N ;

Furuta, T ;

Suemitsu, T ;

Umeda, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (10) :5823-5828

[10] ELECTROLUMINESCENCE OF INALAS/INGAAS HEMTS LATTICE-MATCHED TO INP SUBSTRATES [J].

SHIGEKAWA, N ;

ENOKI, T ;

FURUTA, T ;

ITO, H .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (11) :515-517