Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

被引：16
作者：
Rajpalke, Mohana K. [1 ]
Roul, Basanta [1 ,2 ]
Kumar, Mahesh [1 ,2 ]
Bhat, Thirumaleshwara N. [1 ]
Sinha, Neeraj [3 ]
Krupanidhi, S. B. [1 ]
机构：
[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India
[2] Bharat Elect, Cent Res Lab, Bangalore 560013, Karnataka, India
[3] Govt India, Off Principal Sci Advisor, New Delhi 110011, India
来源：
SCRIPTA MATERIALIA | 2011年 / 65卷 / 01期
关键词：
Molecular beam epitaxy; High-resolution X-ray diffraction; Nonpolar GaN; Photoluminescence; CHEMICAL-VAPOR-DEPOSITION; LUMINESCENCE; NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTORS; DEVICES; LAYERS;
D O I：
10.1016/j.scriptamat.2011.03.017
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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收藏
页码：33 / 36
页数：4
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