1.5-μm wavelength narrow stripe distributed reflector lasers for high-performance operation

被引：8

作者：

Kim, HC ^{[1
]}

Kanjo, H ^{[1
]}

Hasegawa, T ^{[1
]}

Tamura, S ^{[1
]}

Arai, S ^{[1
]}

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Tokyo 1528552, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2003年 / 9卷 / 05期

关键词：

distributed Bragg reflector (DBR) laser; distributed reflector laser; distributed feedback (DFB) laser; GaInAsP/InP; CH4/H-2-RIE;

D O I：

10.1109/JSTQE.2003.819497

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.5 mum-wavelength narrow stripe distributed reflector (DR) lasers consisting of first-order vertical grating (VG) and distributed Bragg reflector (DBR) mirrors were realized by deeply etching the as-grown wafer and passivating the etched surface by SiO2. Design consideration, fabrication, find lasing performances were studied. A low threshold current of 2.8 mA and a differential quantum efficiency of 28% from the front facet were achieved for a 1.3 mum stripe width and a 150 mum cavity length under room temperature (RT) continuous wave (CW) operation. Details of threshold behavior of these lasers are presented. Lasing performances of FP and DBR lasers are also described for comparison.

引用

页码：1146 / 1152

页数：7

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