Metal electrode influence on the wet selective etching of GaAs/AlGaAs

被引：0

作者：

Wang Jie ^{[1
]}

Han Qin ^{[1
]}

Yang Xiao-Hong ^{[1
]}

Wang Xiu-Ping ^{[1
]}

Ni Hai-Qiao ^{[2
]}

He Ji-Fang ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 04期

关键词：

aluminium compounds; chromium alloys; copper alloys; electrochemical analysis; electrochemical electrodes; etching; gallium arsenide; gold alloys; III-V semiconductors; metallic thin films; titanium alloys; HYDROGEN-PEROXIDE SOLUTIONS; III-V SEMICONDUCTORS; PSEUDOMORPHIC MODFETS; GAAS; FABRICATION; TRANSISTOR; ALGAAS;

D O I：

10.1116/1.3610969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal electrodes were found to influence the wet selective etching of GaAs in a citric acid/hydrogen peroxide solution. The authors found that metal films such as a Cr/Au or Ti/Au alloy deposited on a semiconductor surface can mostly prevent the etching of GaAs. The GaAs sacrificial material that was exposed to the selective etchant near the metal electrode was not removed at all. Contrast experiments show that it can be removed selectively if no metal is present on the surface or if the GaAs is located far enough from the metal. Electrochemical analyses were undertaken to determine the passivation mechanism. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3610969]

引用

页数：4

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