Visualizing Individual Nitrogen Dopants in Monolayer Graphene

被引：771

作者：

Zhao, Liuyan ^{[1
]}

He, Rui ^{[1
]}

Rim, Kwang Taeg ^{[2
]}

Schiros, Theanne ^{[3
]}

Kim, Keun Soo ^{[1
,4
,5
]}

Zhou, Hui ^{[1
]}

Gutierrez, Christopher ^{[1
]}

Chockalingam, S. P. ^{[1
]}

Arguello, Carlos J. ^{[1
]}

Palova, Lucia ^{[2
]}

Nordlund, Dennis ^{[6
]}

Hybertsen, Mark S. ^{[7
]}

Reichman, David R. ^{[2
]}

Heinz, Tony F. ^{[1
,8
]}

Kim, Philip ^{[1
]}

Pinczuk, Aron ^{[1
,9
]}

Flynn, George W. ^{[2
]}

Pasupathy, Abhay N. ^{[1
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

[2] Columbia Univ, Dept Chem, New York, NY 10027 USA

[3] Columbia Univ, Energy Frontier Res Ctr, New York, NY 10027 USA

[4] Sejong Univ, Dept Phys, Seoul 143747, South Korea

[5] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[6] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Light Source, Menlo Pk, CA 94025 USA

[7] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

[8] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[9] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA

来源：

SCIENCE | 2011年 / 333卷 / 6045期

关键词：

SCANNING TUNNELING MICROSCOPE; X-RAY SPECTROSCOPY; DOPED GRAPHENE; FILMS; SCATTERING; GRAPHITE;

D O I：

10.1126/science.1208759

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman spectroscopy, x-ray spectroscopy, and first principles calculations to characterize individual nitrogen dopants in monolayer graphene grown on a copper substrate. Individual nitrogen atoms were incorporated as graphitic dopants, and a fraction of the extra electron on each nitrogen atom was delocalized into the graphene lattice. The electronic structure of nitrogen-doped graphene was strongly modified only within a few lattice spacings of the site of the nitrogen dopant. These findings show that chemical doping is a promising route to achieving high-quality graphene films with a large carrier concentration.

引用

页码：999 / 1003

页数：5

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