Electronic transport modification of single-walled carbon nanotubes by encapsulating alkali-metal ions

被引：0
作者：
Izumida, T [1 ]
Jeong, GH [1 ]
Hirata, T [1 ]
Hatakeyama, R [1 ]
Neo, Y [1 ]
Mimura, H [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
来源：
NANOTECHNOLOGY II | 2005年 / 5838卷
关键词：
single-walled carbon nanotube; electronic devices; encapsulation; field-effect transistor; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE;
D O I：
10.1117/12.608575
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have produced alkali-metal encapsulated single-walled carbon nanotubes using a method of alkali-metal plasma ion irradiation. After plasma ion irradiation, alkali-metal encapsulated single-walled carbon nanotubes are sonicated for several hours in NN-dimethylformamide to make well dispersed solution, then applied on a field-effect transistor substrate. As a result of measurements, pristine semiconducting single-walled carbon nanotubes show p-type conductivity, but Cs-encapsulated single-walled carbon nanotubes show n-type transport properties. This drastic change can be explained by electron transfer from encapsulated Cs atoms toward the surrounding SWNTs. At 11 K, the Coulomb oscillation is observed, implying that an inhomogeneous encapsulation profile of Cs atoms form several quantum dots. Thus, the electronic properties of SWNTs are found to be successfully controlled by plasma ion irradiation.
引用
收藏
页码：208 / 215
页数：8
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