Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

被引：0
作者：
Ding, Qian [1 ]
Wen, Pengyan [2 ]
Gotsmann, Bernd [2 ]
Moselund, Kirsten E. [3 ]
Schenk, Andreas [1 ]
机构：
[1] Swiss Fed Inst Technol, Gloriastr 35, CH-8092 Zurich, Switzerland
[2] IBM Res Europe Zurich, Saumerstr 4, CH-8803 Ruschlikon, Switzerland
[3] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland
来源：
INTEGRATED PHOTONICS PLATFORMS II | 2022年 / 12148卷
关键词：
monolithically integrated pin-diode; self-heating; defects;
D O I：
10.1117/12.2620298
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-InP pin-diode fabricated at IBM-Research Zurich. From transport study, two types of defects are found to be very likely present in the studied device: (i) positive oxide charges close to the interface between III-V materials and top oxide layer and (ii) electron-type traps at the p-InP/i-InGaAs interface. Thermal simulations show that the presence of electron-type traps at the p/i interface enhances the self-heating in the device.
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页数：6
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共 17 条
  • [1] Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes
    Asubay, S.
    Gullu, O.
    Turut, A.
    [J]. APPLIED SURFACE SCIENCE, 2008, 254 (11) : 3558 - 3561
  • [2] Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors
    Dehe, A
    Hartnagel, HL
    Pavlidis, D
    Hong, K
    Kuphal, E
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (20) : 3039 - 3041
  • [3] On-chip optical interconnect roadmap: Challenges and critical directions
    Haurylau, Mikhail
    Chen, Guoqing
    Chen, Hui
    Zhang, Jidong
    Nelson, Nicholas A.
    Albonesi, David H.
    Friedman, Eby G.
    Fauchet, Philippe M.
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (06) : 1699 - 1705
  • [4] Hybrid Silicon Photonics for Optical Interconnects
    Heck, Martijn J. R.
    Chen, Hui-Wen
    Fang, Alexander W.
    Koch, Brian R.
    Liang, Di
    Park, Hyundai
    Sysak, Matthew N.
    Bowers, John E.
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (02) : 333 - 346
  • [5] Microstructural study of Ti/Pt/Au contacts to p-InGaAs
    Ivey, DG
    Ingrey, S
    Noel, JP
    Lau, WM
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 49 (01): : 66 - 73
  • [6] THERMAL CONDUCTIVITY + SEEBECK COEFFCIENT OF INP
    KUDMAN, I
    STEIGMEIER, EF
    [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1665 - +
  • [7] Surface dark current mechanisms in III-V infrared photodetectors [Invited]
    Marozas, B. T.
    Hughes, W. D.
    Du, X.
    Sidor, D. E.
    Savich, G. R.
    Wicks, G. W.
    [J]. OPTICAL MATERIALS EXPRESS, 2018, 8 (06): : 1419 - 1424
  • [8] Photonic quantum technologies
    O'Brien, Jeremy L.
    Furusawa, Akira
    Vuckovic, Jelena
    [J]. NATURE PHOTONICS, 2009, 3 (12) : 687 - 695
  • [9] The potential and global outlook of integrated photonics for quantum technologies
    Pelucchi, Emanuele
    Fagas, Giorgos
    Aharonovich, Igor
    Englund, Dirk
    Figueroa, Eden
    Gong, Qihuang
    Hannes, Hubel
    Liu, Jin
    Lu, Chao-Yang
    Matsuda, Nobuyuki
    Pan, Jian-Wei
    Schreck, Florian
    Sciarrino, Fabio
    Silberhorn, Christine
    Wang, Jianwei
    Jons, Klaus D.
    [J]. NATURE REVIEWS PHYSICS, 2022, 4 (03) : 194 - 208
  • [10] Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material
    Ramu, Ashok T.
    Mages, Phillip
    Zhang, Chong
    Imamura, Jeffrey T.
    Bowers, John E.
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2012, 83 (09)
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