Low-Temperature Refill Process for Through-Silicon-Vias (TSVs) in Stacked Ultra-Thin Chip-on-Wafer by Aerosol Jet Printed Silver

被引：0

作者：

Fenwana, Saleh ^{[1
]}

Keck, Juergen ^{[2
]}

Mahadi-Ul Hassan ^{[1
]}

Harendt, Christine ^{[1
]}

Burghartz, J. N. ^{[1
]}

机构：

[1] Inst Mikroelekt Stuttgart IMS CHIPS, Allmandring 30a, D-70569 Stuttgart, Germany

[2] Hahn Schickard, D-70569 Stuttgart, Germany

来源：

2015 EUROPEAN MICROELECTRONICS PACKAGING CONFERENCE (EMPC) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The filling process of Through-Silicon Via (TSV) based on printed silver using the Aerosol Jet((TM)) method is presented and discussed. TSVs with different diameters as via-last process in 18 mu m ultra-thin ChipFilm (TM) dies, including a self-aligned etching process and their passivation are demonstrated. Daisy chain test structures on top of ChipFilm (TM) dies and on the bottom wafer are used for demonstration purposes. Moreover, the successful 3D-integration of an 18 mu m ChipFilm (TM) die on the wafer using patterned photosensitive BCBs including a plasma treatment step right before stacking is presented. Finally, the work is concluded by demonstrating the results of electrical characterization of the filled and annealed TSVs at 180 degrees C.

引用

页数：6