Photoconductivity in BiFeO3 thin films

被引：473

作者：

Basu, S. R. ^{[1
,2
,3
]}

Martin, L. W. ^{[1
,2
,3
]}

Chu, Y. H. ^{[1
,2
,3
]}

Gajek, M. ^{[1
,2
,3
]}

Ramesh, R. ^{[1
,2
,3
]}

Rai, R. C. ^{[4
]}

Xu, X. ^{[4
]}

Musfeldt, J. L. ^{[4
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2887908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of epitaxial BiFeO(3) thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17 eV, a direct gap (2.667 +/- 0.005 eV at 300 K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO(3) films under illumination from a 100 mW/cm(2) white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1 Torr. Large increases in photoconductivity are observed in light.

引用

页数：3

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