PROPERTIES OF SHUNT-PROTECTED TUNNELING DEVICES FOR THE ELECTRON COUNTING CAPACITANCE STANDARD (ECCS) EXPERIMENT AT PTB

被引：0

作者：

Camarota, Benedetta ^{[1
]}

Lotkhov, Sergey V. ^{[1
]}

Scherer, Hansjoerg ^{[1
]}

Weimann, Thomas ^{[1
]}

Hinze, Peter ^{[1
]}

Zorin, Alexander ^{[1
]}

机构：

[1] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany

来源：

2010 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS CPEM | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the progress in the Electron-Counting-Capacitance-Standard (ECCS) experiment. In particular, we address electrostatic breakdown in metallic single-electron tunneling (SET) structures fabricated on high-quality insulating substrates, An approach was developed via on-chip silicon shunts protecting the high-ohmic nanoscale tunnel junctions against damage.

引用

页码：291 / 292

页数：2

共 7 条

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