Super barrier rectifier - A new generation of power diode

被引：23

作者：

Rodov, Vladimir ^{[1
]}

Ankoudinov, Alexei L. ^{[1
]}

Taufik ^{[2
]}

机构：

[1] Lakota Technol Inc, Seattle, WA 98052 USA

[2] Calif Polytech State Univ San Luis Obispo, Dept Elect Engn, San Luis Obispo, CA 93407 USA

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2008年 / 44卷 / 01期

关键词：

power semiconductor diodes; rectifiers; semiconductor devices; semiconductor diodes;

D O I：

10.1109/TIA.2007.912752

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The main principle behind the new super barrier rectifier (SBR) approach is to create the "super" barrier for majority carriers without unreliable metal-semiconductor Schottky contact. The SBR technology creates such barrier in the MOS channel. The height of this barrier can be easily adjusted by the doping concentration in the channel. This paper demonstrates that the new power diodes combine high performance and high reliability for low voltage applications (below 100 V). The underlying concepts and analysis of operation are presented as well as the laboratory test results that compare performance and reliability between Schottky and the new SBR diode.

引用

页码：234 / 237

页数：4