The effects of changing the electrodes temperature on the tunnel magnetoresistance in the ferromagnetic single electron transistor

被引：0
作者：
Ahmadi, N. [1 ]
Pourali, N. [2 ]
Kavaz, E. [3 ]
机构：
[1] Islamic Azad Univ, Marand Branch, Dept Phys, Marand, Iran
[2] Sahand Univ Technol, Phys Dept, Fac Sci, Tabriz 513351996, Iran
[3] Ataturk Univ, Dept Phys, Fac Sci, Erzurum, Turkey
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2018年 / 446卷
关键词：
Transistor; Single electron; Ferromagnetic; Tunnel magnetoresistance; Electrodes temperature; COULOMB-BLOCKADE; SPIN ACCUMULATION; JUNCTIONS; OSCILLATIONS;
D O I：
10.1016/j.jmmm.2017.09.019
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferromagnetic single electron transistor with electrodes having different temperatures is investigated and the effects of changing electrodes temperature on TMR of system are studied. A modified orthodox theory is used to study the system and to calculate the electron tunneling transition rate. The results show that the temperature of electrodes can be an effective tool to control and tune the tunnel magnetoresistance of FM-SET. Also, the effects of parameters such as resistance ratio of junctions, magnetic polarization and spin relaxation time on the behaviour of the system are studied. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：150 / 154
页数：5
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