Temperature-Dependent Exciton Dynamics in a Single GaAs Quantum Ring and a Quantum Dot

被引：1
作者：
Kim, Heedae [1 ]
Kim, Jong Su [2 ]
Song, Jin Dong [3 ]
机构：
[1] Jeonbuk Natl Univ, Sch Semicond Sci, Technol & Semicond Phys Res Ctr, Jeonju 561756, South Korea
[2] Yeungnam Univ, Dept Phys, Gyongsan 38541, South Korea
[3] Korea Inst Sci & Technol, Ctr Optoelect Convergence Syst, Seoul 136791, South Korea
来源：
NANOMATERIALS | 2022年 / 12卷 / 14期
基金：
新加坡国家研究基金会;
关键词：
quantum ring structure; quantum dot structure; exciton; photoluminescence; localized states; polarization dependence; fine structures; strong confinement; PHOTOLUMINESCENCE; TIME;
D O I：
10.3390/nano12142331
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Micro-photoluminescence was observed while increasing the excitation power in a single GaAs quantum ring (QR) at 4 K. Fine structures at the energy levels of the ground (N = 1) and excited (N = 2) state excitons exhibited a blue shift when excitation power increased. The excited state exciton had a strong polarization dependence that stemmed from the asymmetric localized state. According to temperature-dependence measurements, strong exciton-phonon interaction (48 meV) was observed from an excited exciton state in comparison with the weak exciton-phonon interaction (27 meV) from the ground exciton state, resulting from enhanced confinement in the excited exciton state. In addition, higher activation energy (by 20 meV) was observed for the confined electrons in a single GaAs QR, where the confinement effect was enhanced by the asymmetric ring structure.
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页数：9
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