Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices

被引：43

作者：

Biju, Kuyyadi P. ^{[1
]}

Liu, XinJun ^{[2
]}

Bourim, El Mostafa ^{[1
]}

Kim, Insung ^{[2
]}

Jung, Seungjae ^{[2
]}

Siddik, Manzar ^{[2
]}

Lee, Joonmyoung ^{[2
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] GIST, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[2] GIST, Sch Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 49期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1088/0022-3727/43/49/495104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The resistive switching characteristics of Pt/TiO2/W devices in a submicrometre via-hole structure are investigated. TiO2 film is grown by the sol-gel spin coating technique. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias resulting in a rectification ratio of >60 at 2V in the low-resistance state. The switching mechanism in our device can be interpreted as an anion migration-induced redox reaction at the tungsten bottom electrode (W). The rectifying effect can significantly reduce the sneak path current in a crossbar array and provide a feasible way to achieve high memory density.

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