Electron-beam-induced disordering of the Si(001)-c(4 x 2) surface structure -: art. no. 195502

被引：19

作者：

Shirasawa, T ^{[1
]}

Mizuno, S

Tochihara, H

机构：

[1] Kyushu Univ, Dept Mol & Mat Sci, Fukuoka 8168580, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.94.195502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An electron beam (EB) irradiation effect on the Si(001)-c(4x2) surface was investigated by using low-energy electron diffraction. Quarter-order spots become dim and streaky by EB irradiation below similar to 40 K, indicating a disordering in the c(4x2) arrangement of buckled dimers. A quantitative analysis of decreasing rates of the spot intensity at various conditions of beam current, beam energy, and substrate temperature leads to a proposal for a mechanism of the disordering in the buckled-dimer arrangement in terms of electronic excitation, electron-phonon coupling, and carrier concentration.

引用

页数：4

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