METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXIV
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2010年
/
7638卷
关键词:
Helium Ion Microscopy;
HIM;
nanoimaging;
nanofabrication;
scanning helium ion beam lithography;
SHIBL;
lithography;
helium ion beam induced deposition;
HIBID;
BEAM-INDUCED DEPOSITION;
ELECTRON-BEAM;
RESOLUTION;
LITHOGRAPHY;
D O I:
10.1117/12.862438
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The recently introduced helium ion microscope (HIM) is capable of imaging and fabrication of nanostructures thanks to its sub-nanometer sized ion probe [1,2]. The unique interaction of the helium ions with the sample material provides very localized secondary electron emission, thus providing a valuable signal for high-resolution imaging as well as a mechanism for very precise nanofabrication [3]. The low proximity effects, due to the low yield of backscattered ions and the confinement of the forward scattered ions into a narrow cone, enable patterning of ultra-dense sub-10 nm structures. This paper presents various nanofabrication results obtained with direct-write, with scanning helium ion beam lithography, and with helium ion beam induced deposition.